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International Journal of Nanoelectronics and Materials


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International Journal of Nanoelectronics and Materials

Volume 10, No. 2, 2017

Joshi, H; Rai, D.P; Shankar, A; Patra, P.K; Thapa, R.K.
A comparative study of electronic and thermoelectric properties of bulk, 2D sheet and 1D wire of silicon: an ab-initio study.
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1
Prachi Sharma; Navneet Gupta.
Two dimensional simulation and analysis of density-of-states (DOS) in top-gated nanocrystalline silicon thin film transistor (nc-Si TFT)
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2
Murugapandiyan, P; Ravimaran, S; William, J.
DC and microwave characteristics of AlN spacer based Al0.37Ga0.63N/GaN HEMT on SiC substrates for high power RF
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3
Manimekalai, D; Pradipkumar Dixit.
Analysis of reliability for fault tolerant design in NANO CMOS logic circuit
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4
Aruna P. Wanninayake; Benjamin C. Church; Nidal Abu-Zahra.
CuO NPs incorporated single and double junction polymer solar cells
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5
Fouad, S; Naseer Sabri; Jamal, Z.A.Z; Poopalan, P.
Surface plasmon resonance sensor sensitivity enhancement using gold-dielectric material
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6
See, J.H; Md Arshad, M.K; Fathil, M.F.M.
ESD improvement in P-i-N diode through introducing a lighter and deeper anode junction
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7
Karthik, R.
Modelling and characterization of fabricated metal-insulator-metal capacitors
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8
Rida Ahmed Ammar; Mostefa Lemerini.
Surface plasmon polariton in metal-insulator-metal configuration
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9
Sabah Al-ithawi.
Optical modulator with ZnO bulk single crystals
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10
  Journal Coverage
Volume 13, Special Issue, December 2020
Volume 13, Special Issue, Mei 2020
Volume 13, No. 4, October 2020
Volume 13, No. 3, July 2020
Volume 13, No. 2, Apr 2020

  Indexation
Indexed by MyJurnal (2019)
H-Index 0
Immediacy Index 0.000
Rank 0
Indexed by Scopus (SCImago Journal Rankings 2016)
Impact Factor 0
Rank Q3 (Electrical and Electronic Engineering)
Q3 (Electronic, Optical and Magnetic Materials)
Additional Information 0.238 (SJR)

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